INI
Semiconductor Materials - INI
Semiconductor materials are foundational materials that constitute semiconductor devices, which are core components of electronic equipment. Materials such as silicon, germanium, and gallium arsenide each possess different electrical, optical, and thermal properties, and are used in a wide range of applications including integrated circuits, high-frequency devices, optoelectronic devices, and solar cells. First-generation silicon and germanium, along with second-generation compound semiconductor gallium arsenide, are essential materials supporting the modern electronics industry.
semiconductor
silicon
germanium
gallium arsenide
electronic materials
integrated circuit
compound semiconductor
[item.silicon]
code=Si
slug=silicon
name=Silicon
description=The most widely used semiconductor material and the main material for integrated circuits.
applications=["Integrated Circuits (IC)","CPU","Memory","Microprocessors","Power Devices","Solar Cells"]
atomicNumber=14
bandgapType=Indirect
bandgap_unit=eV
bandgap_value=1.12
category=Elemental Semiconductor
electronMobility_unit=cm²/Vs
electronMobility_value=1400
generation=第1世代
symbol=Si
[item.germanium]
code=Ge
slug=germanium
name=Germanium
description=Originally used as an early transistor material, now utilized in SiGe alloys and infrared optical applications.
applications=["SiGe Semiconductors","Infrared Optical Equipment","Fiber Optic Communications","Multi-junction Solar Cells","High-frequency Devices","PET Scanners"]
atomicNumber=32
bandgapType=Indirect
bandgap_unit=eV
bandgap_value=0.67
category=Elemental Semiconductor
electronMobility_unit=cm²/Vs
electronMobility_value=3900
generation=第1世代
symbol=Ge
[item.gallium-arsenide]
code=GaAs
slug=gallium-arsenide
name=Gallium Arsenide
description=A high-performance compound semiconductor with high electron mobility and a direct bandgap structure.
applications=["5G/6G Base Stations","RF Devices","Semiconductor Lasers","Optical Communications","Satellite Communications","Space Solar Cells","Radar"]
atomicNumber=
bandgapType=Direct
bandgap_unit=eV
bandgap_value=1.42
category=Compound Semiconductor
electronMobility_unit=cm²/Vs
electronMobility_value=8500
generation=第2世代
symbol=GaAs