TSV

Semiconductor Materials - TSV

Semiconductor materials are foundational materials that constitute semiconductor devices, which are core components of electronic equipment. Materials such as silicon, germanium, and gallium arsenide each possess different electrical, optical, and thermal properties, and are used in a wide range of applications including integrated circuits, high-frequency devices, optoelectronic devices, and solar cells. First-generation silicon and germanium, along with second-generation compound semiconductor gallium arsenide, are essential materials supporting the modern electronics industry.

semiconductor silicon germanium gallium arsenide electronic materials integrated circuit compound semiconductor

code	slug	name	description	applications	atomicNumber	bandgapType	bandgap_unit	bandgap_value	category	electronMobility_unit	electronMobility_value	generation	symbol
Si	silicon	Silicon	The most widely used semiconductor material and the main material for integrated circuits.	["Integrated Circuits (IC)","CPU","Memory","Microprocessors","Power Devices","Solar Cells"]	14	Indirect	eV	1.12	Elemental Semiconductor	cm²/Vs	1400	第1世代	Si
Ge	germanium	Germanium	Originally used as an early transistor material, now utilized in SiGe alloys and infrared optical applications.	["SiGe Semiconductors","Infrared Optical Equipment","Fiber Optic Communications","Multi-junction Solar Cells","High-frequency Devices","PET Scanners"]	32	Indirect	eV	0.67	Elemental Semiconductor	cm²/Vs	3900	第1世代	Ge
GaAs	gallium-arsenide	Gallium Arsenide	A high-performance compound semiconductor with high electron mobility and a direct bandgap structure.	["5G/6G Base Stations","RF Devices","Semiconductor Lasers","Optical Communications","Satellite Communications","Space Solar Cells","Radar"]		Direct	eV	1.42	Compound Semiconductor	cm²/Vs	8500	第2世代	GaAs