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Semiconductor Materials - JSON

Semiconductor materials are foundational materials that constitute semiconductor devices, which are core components of electronic equipment. Materials such as silicon, germanium, and gallium arsenide each possess different electrical, optical, and thermal properties, and are used in a wide range of applications including integrated circuits, high-frequency devices, optoelectronic devices, and solar cells. First-generation silicon and germanium, along with second-generation compound semiconductor gallium arsenide, are essential materials supporting the modern electronics industry.

semiconductor silicon germanium gallium arsenide electronic materials integrated circuit compound semiconductor

[
  {
    "code": "Si",
    "slug": "silicon",
    "name": "Silicon",
    "symbol": "Si",
    "atomicNumber": 14,
    "generation": "第1世代",
    "category": "Elemental Semiconductor",
    "bandgap": {
      "value": 1.12,
      "unit": "eV"
    },
    "bandgapType": "Indirect",
    "electronMobility": {
      "value": 1400,
      "unit": "cm²/Vs"
    },
    "description": "The most widely used semiconductor material and the main material for integrated circuits.",
    "applications": [
      "Integrated Circuits (IC)",
      "CPU",
      "Memory",
      "Microprocessors",
      "Power Devices",
      "Solar Cells"
    ]
  },
  {
    "code": "Ge",
    "slug": "germanium",
    "name": "Germanium",
    "symbol": "Ge",
    "atomicNumber": 32,
    "generation": "第1世代",
    "category": "Elemental Semiconductor",
    "bandgap": {
      "value": 0.67,
      "unit": "eV"
    },
    "bandgapType": "Indirect",
    "electronMobility": {
      "value": 3900,
      "unit": "cm²/Vs"
    },
    "description": "Originally used as an early transistor material, now utilized in SiGe alloys and infrared optical applications.",
    "applications": [
      "SiGe Semiconductors",
      "Infrared Optical Equipment",
      "Fiber Optic Communications",
      "Multi-junction Solar Cells",
      "High-frequency Devices",
      "PET Scanners"
    ]
  },
  {
    "code": "GaAs",
    "slug": "gallium-arsenide",
    "name": "Gallium Arsenide",
    "symbol": "GaAs",
    "atomicNumber": null,
    "generation": "第2世代",
    "category": "Compound Semiconductor",
    "bandgap": {
      "value": 1.42,
      "unit": "eV"
    },
    "bandgapType": "Direct",
    "electronMobility": {
      "value": 8500,
      "unit": "cm²/Vs"
    },
    "description": "A high-performance compound semiconductor with high electron mobility and a direct bandgap structure.",
    "applications": [
      "5G/6G Base Stations",
      "RF Devices",
      "Semiconductor Lasers",
      "Optical Communications",
      "Satellite Communications",
      "Space Solar Cells",
      "Radar"
    ]
  }
]